Phonon deformation potentials for the corundum structure of sapphire

Abstract

AbstractA theoretical Raman polarization analysis is proposed for the corundum structure of sapphire (α‐Al2O3) and validation experiments conducted with the purpose of retrieving the full set of phonon deformation potentials (PDPs). From the theoretical side, the change in force constants under stress/strain has been expressed in matrix form, and close‐form solutions were obtained for the eigenvalues that take into account the local dependence of oblique phonons on crystallographic orientation (i.e. uncoupling the effects of local crystal orientation and stress tensor from the shifts of Raman bands). From the experimental side, controlled (uniaxial) stress fields were applied to sapphire parallelepiped bars (along known crystallographic axes) while Raman spectra were systematically recorded along the bar thickness. An untextured alumina polycrystal with fine grain size was also investigated according to the same procedure. As a result of this set of experiments, PDPs for both A1g and Eg vibrational bands could be retrieved. Validation of PDP constants was obtained by measuring the steeply graded stress fields developed ahead of a surface crack propagated along an arbitrary crystallographic direction in the R‐plane of the sapphire crystal. Copyright © 2011 John Wiley & Sons, Ltd.