Abstract
A phonon-coupled trap model is proposed for trap-assisted injection mechanism in silicon-oxide-nitride-oxide-silicon (SONOS)/metal-nitride-oxide-silicon (MNOS) structures at low voltages. On the basis of this model, a theory of charge injection in SONOS/MNOS has been developed. Charge injection experimental data was fitted by this theory. Obtained trap parameters are close to those previously reported [K. A. Nasyrov et al., J. Appl. Phys. 96, 4293 (2004)], where the current dependence on temperature and electric field was investigated in MNOS.
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