Abstract
The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW), performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS), confocal Raman-, and photoluminescence (PL)-mapping technique. A non-concomitant near-infrared (NIR) emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons with deeply trapped holes at . A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.
Highlights
Zinc oxide (ZnO) nanowires (NWs) are of great interest for the development of devices in various applied fields that include a direct and wideband gap, optoelectronic devices like light-emitting diodes, strong ultraviolet emissions, and solid-state lasers [1,2,3,4,5]
Recent studies on ZnO NWs have slightly shifted the focus to different aspects that include the Zn vacancy induced green luminescence [6], oxygen induced strain effect [7], and the influence of short-range correlation in phonon confinement [8]
In our previous report [24,25], we proposed that metal-oxide NWs grown below the melting temperatures are attributed to the short-circuit diffusion mechanism
Summary
Zinc oxide (ZnO) nanowires (NWs) are of great interest for the development of devices in various applied fields that include a direct and wideband gap, optoelectronic devices like light-emitting diodes, strong ultraviolet emissions, and solid-state lasers [1,2,3,4,5]. How to observe and analyze the atomic diffusion and phonon confinement in the metal-oxide nanowire, becomes important along the growth direction of a single NW, using optical measurements. A Raman mapping technique was employed to investigate the phonon and geometric properties of a single ZnO NW [7,8]. In most of these various synthesis methods, various catalysts or auxiliaries were utilized in these fabrication processes. A confocal Raman spectrometer has been used to investigate the phonon confinement effect of phonon-vibration- and NIR luminescence-mapping on the evolution of defects along the growth direction of a single ZnO NW, without any post-annealing and non-element doped processes
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