Abstract
Abstract The phonon thermal conductivity values for sample Ge-11 from 2 to 50°K for carrier concentration 2x1018 cm−3 is explained by borrowing an idea of holes being in mixed state i.e. both in localised bound state and in the free state in the intermediate concentration region. Since the above sample lie in the intermediate concentration region of metal-nonmetal transition, the theory of hole-phonon scattering in the mixed state is used (1). The density of states effective mass and deformation potential for the holes are calculated and are in good agreement with the experimentally known values. The impurity and isotope scattering parameters are also determined in the present calculations.
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