Abstract
Phonon generation by electrons is supplied in n-type Si crystals in electric fields E≤100 kV/cm at the lattice temperature of 80 K employing the ensemble Monte Carlo technique. Electron transfer between equivalent energy valleys is accounted for the g-type- and f-type phonon absorption and emission. Acoustic phonons are accounted for the quasi-elastic scattering of electrons within the energy valleys. Excess phonon number is determined using numerical data on phonon generation rate and experimental values of phonon lifetimes. The feasibility of stimulated emission of infrared-range photons due to direct optical transitions between the phonon bands is discussed.
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