Abstract
In this work, we present a first-principles study of quantum transport in tunnel FETs based on van der Waals (vdW) heterostructures of transition metal dichalcogenides (TMDs). We focus on 1T-HfSe2 and 1T-SnS2 monolayers to construct a vertical heterostructure with a type-II band alignment. By including dissipative effects due to the electron–phonon interaction, we show that vdW tunnel FETs are highly sensible to the phonon coupling due to polar optical phonons present in TMDs which results in an increased sub-threshold swing (SS) and reduced ON-current. However, vdW TFETs are still able to provide high ON-current values due to the inversion of CB and VB at high VGS and high inter-valley tunneling.
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