Abstract
One year ago we published the first results on the electronic structure of the P-level in 1000 ppm PH 3/CH 4 doped {111}-oriented n-type diamond films, using the quasi-steady-state photocurrent technique (PC) and photothermal ionization spectroscopy (PTIS). In this work we have extended our measurements at various temperatures (4.2–77.4 K) to samples with various doping levels (100, 500 and 1000 ppm PH 3/CH 4). This allowed us to obtain more precise results for the electronic structure of the phosphorus defect in homoepitaxial n-type CVD diamond films, making use of the 155 meV LO-phonon to explain the oscillatory photoconductivity. These results are confirmed by the PTIS maxima and Fourier transform infra-red (FTIR) data. In addition we present first measurements on a 2000-ppm doped {100}-oriented sample.
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