Abstract
Abstract The overlap integrals are calculated for Si by means of the full zone double group k · p -method whereas they are usually roughly estimated. The results confirm that phonon-assisted Auger recombination is the predominating radiationless recombination mechanism in indirect band gap semiconductors. This holds not only for highly doped materials but also for electron- hole drops.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
