Abstract
The paper presents temperature-dependent Raman studies of anharmonic phonon properties of graphene as-grown on copper, transferred to copper, SiO2/Si, and Al2O3, as well as nitrogen-doped graphene on SiO2/Si. Different G and 2D peak position and linewidth temperature dependencies were obtained in the temperature range of 20–294 K, upon which anharmonic constants for 3- and 4-phonon processes were determined. Values of anharmonic constants obtained from G peak shift for undoped graphene on dielectric substrates were quantitatively close to both experimental results for unsupported graphene and theoretical predictions reported in the literature, while the values for graphene as-grown on copper were almost two orders of magnitude greater. The results were analyzed in terms of substrate effect on phonon properties of graphene. The present study is useful for taking into account anharmonic phonon effects in graphene when designing graphene-based nanoelectronic devices.
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