Abstract
AbstractThe equilibrium sizes of domains caused by the electric field of the atomic force microscope tip in ferroelectric semicon‐ductor crystals have been calculated. The domain was consi‐dered as a prolate semi‐ellipsoid with rather thin domain walls. For the first time we modified the Landauer model al‐lowing for semiconductor properties of the sample and the surface energy of the domain butt. The free carriers inside the crystal lead to the formation of a screening layer around the domain, which partially shields its interior from the depolari‐zation field. The obtained dependence of domain radius on applied voltage is in a good quantitative agreement with the ones of submicron ferroelectric domains recorded by high‐voltage atomic force and scanning probe microscopy in LiNbO3, BaTiO3and RbTiOPO4crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
