Phenomenological considerations of resistively switching TiO<inf>2</inf> in nano crossbar arrays

Abstract

Within this paper we present the fabrication of nano crosspoint junctions and arrays with electron beam direct writing (EBDW). Reactively sputtered TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> was incorporated as a resistively switching thin film and electrically characterized concerning its performance. These devices are suitable for novel non-volatile storage systems in form of resistive random access memories (RRAM). All used materials as well as the fabrication processes for the functional thin film are in good accordance with current and future CMOS technology and provide a way to achieve low cost, high density non-volatile memory. The experiments were performed with 100-100 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> small single junctions and arrays with 200 nm wide wires. The results of the former prove a non-volatility for more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> s and a switching speed better than 10 ns for the SET- and RESET operation (from high to low resistance state and in reverse direction). The latter prove the direct addressability of junctions within an array.