Abstract
The effect of codoping in semiconductors takes on the appearance of reduced impurity ionisation and enhanced solubility of the majority impurity in presence of the compensating one. These two issues were addressed by considering the changes in the impurity ionisation process due to a high concentration of donors and acceptors. Specifically potential fluctuations associated with random distributions of impurities are dealt with in a simple but tractable model which allows one to define the optimum conditions of codoping. The required compensation ratio turns out to be around 0.5. Low activation energy is also predicted. Potential fluctuations are shown to affect as well impurity incorporation from an external phase in codoping experiments. A pending question is the actual carrier mobility in such disordered material.
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