Abstract
New design of silicon stripixel sensor has been developed at BNL for PHENIX upgrade. The sensor is a single-sided, DC-coupled, two-dimensional position sensitive device with good position resolution. This design is simpler for sensor fabrication and signal processing than the conventional double-sided strip sensor. HPK has produced pre-production stripixel sensors with thickness of 625μm. The quality assurance tests show that the very low leakage current 0.12nA per strip allows the use of the SVX4 chip. A long term stability test shows that the leakage current is stable over a long period of time. The study of the effects of irradiation on the performance of the stripixel sensor has been made using p+p collisions at 200GeV at PHENIX, 14MeV neutron and 20MeV proton beams.
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