Phase-transitions in GeSb induced by customized ultrafast optical pulses

Abstract

The use of ultrafast laser pulses to initiate solid-state phase-transitions in certain materials has shown promise in achieving sub-nanosecond phase changes with different optical properties. These phase changes have been well studied using pulse durations between femtoseconds and nanoseconds to determine the dynamics for the reversible phase changes on multiple time scales. In this study femtosecond pulse shaping techniques, driven by evolutionary algorithms, were used to obtain optimized temporally shaped ultrashort laser pulses to induce and control permanent phase changes in GeSb thin-films. Through monitoring the pulse effects it has been determined that the crystalline-to-amorphous phase transition is minimized using optical pulses with pulse widths less than the electron–phonon coupling time. It is maximized by using pulses longer than the time required for energy transfer from the excited carriers to the lattice.