Abstract
The possibility of the slab or stripe phase separation (alternating ferromagnetic highly- conductive and insulating antiferromagnetic layers) is proved for isotropic degenerate antiferromagnetic semiconductors. This type of phase separation competes with the droplet phase separation (ferromagnetic droplets in the antiferromagnetic host or vice versa). The interaction of electrons with optical phonons alone cannot cause phase-separated state with alternating highly-conductive and insulating regions but it stabilizes the magnetic phase separation. The magnetostriction deformation of the lattice in the phase-separated state is investigated.
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