Abstract
Cu2ZnSnS4 (CZTS) thin films were prepared by sulfurizing stacked precursors by sputtering from Cu-Zn and Cu-Sn targets which is promising for industry. The phases formation during sulfurization were investigated by varying sulfurization temperatures from 350 °C to 550 °C. At temperatures of 350 °C and 400 °C, only a thin layer ZnS formed on the surface. Besides, phases of Cu5Zn8, Cu6Sn5, Sn were found in films. At elevated temperature, films were composed of CZTS and a small amount of SnS. The metal compositions in films changed from Sn rich into Zn rich around 350 °C and fluctuated a little at elevated temperature. The ratios of [S]/[metal] dramatically increased at 450 °C and reached to 0.96 at 550 °C. The electrical properties of films supported the phases formation pathway of metal phases followed by sulfides.
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