Abstract
The efficiency of four-wave-mixing arising from Raman and non-resonant nonlinear susceptibilities in silicon waveguides is studied in the 1.3 - 1.8microm regime. The wavelength conversion efficiency is dominated by the Raman contribution to the nonlinear susceptibility, and high conversion efficiencies can be achieved under the phase-matching condition. In this context, dispersion in silicon waveguides is analyzed and it is shown that phase-matching is achieved in properly engineered waveguides where birefringence compensates for material dispersion. Finally the sensitivity of the phase mismatch to fabrication-induced errors in waveguide dimensions is quantified.
Highlights
Silicon-On-insulator (SOI) has emerged as an ideal platform for integrated optics
We show how phase matching can be achieved by the proper design of the rib geometry
It is shown that in such waveguides, peak conversion efficiencies of tens of percent can be achieved at pump intensities of 10MW/cm2 in a 2cm long waveguide with a loss of 1dB/cm
Summary
Silicon-On-insulator (SOI) has emerged as an ideal platform for integrated optics. Driven by the electronic IC industry, the quality of commercial SOI wafers continue to improve while the cost continues to decrease. Compared to other integrated optics platforms, a distinguishing property of SOI is the tight optical confinement made possible by the large index mismatch between the silicon and SiO2 This renders SOI ideal for photonic band structures as it minimizes radiation into the substrate even when extreme index modulation is performed [2]. We have proposed and demonstrated the use of Raman effect to achieve active optical functionality in silicon waveguides [3]. SOI waveguides can confine the optical field to an area that is approximately 100 times smaller than the modal area in a silica fiber The combination of these properties will make SRS observable over millimeter-scale interaction lengths encountered in an integrated optic device.
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