Abstract
This project models dendrite growth during nonequilibrium solidification of binary alloys using the phase-field method (PFM). Understanding the dendrite formation processes is important because the microstructural features directly influence mechanical properties of the produced parts. An improved understanding of dendrite formation may inform design protocols to achieve optimized process parameters for controlled microstructures and enhanced properties of materials. To this end, this work implements a phase-field model to simulate directional solidification of binary alloys. For applications involving strong nonequilibrium effects, a modified antitrapping current model is incorporated to help eject solute into the liquid phase based on experimentally calibrated, velocity-dependent partitioning coefficient. Investigated allow systems include SCN, Si-As, and Ni-Nb. The SCN alloy is chosen to verify the computational method, and the other two are selected for a parametric study due to their different diffusion properties. The modified antitrapping current model is compared with the classical model in terms of predicted dendrite profiles, tip undercooling, and tip velocity. Solidification parameters—the cooling rate and the strength of anisotropy—are studied to reveal their influences on dendrite growth. Computational results demonstrate effectiveness of the PFM and the modified antitrapping current model in simulating rapid solidification with strong nonequilibrium at the interface.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.