Abstract
The structure of gallium arsenide and indium phosphide (001) surfaces in the metalorganic vapor-phase epitaxy (MOVPE) environment has been investigated. During growth at V/III ratios in excess of 10, both materials are terminated with group V ad-dimers (As or P), alkyl groups and hydrogen atoms. These species sit on top of a complete layer of the group V atoms. As the V/III ratio decreases, the top layer of arsenic or phosphorous desorbs from the surface. However, the resulting structures are different on GaAs and InP (001). In the former case, the phase transition occurs with gallium out-diffusion and nucleation of elongated islands. These islands have a β2(2×4) structure that contains only 0.75 monolayer of arsenic dimers. The resulting surface is rough, exposing on average six atomic layers. Conversely, on InP (001), no indium out-diffusion occurs following desorption of the phosphorous ad-dimers. Instead, the underlying P atoms dimerize, forming a (2×1) structure with a phosphorous coverage of 1.0 monolayer.
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