Abstract
Cadmium selenide (CdSe) thin films were fabricated on c-sapphire and GaAs (1 0 0) substrates by low pressure metal organic chemical vapour deposition. The structural properties of these CdSe thin films were investigated by x-ray diffraction and photoluminescence spectroscopy. The effects of growth temperature (Tg) on the structural phase of the CdSe thin films were discussed. Phase transition of CdSe thin films grown on sapphire substrates from zincblende (ZB) to wurtzite (W) was observed with increasing Tg, and the transition critical temperature is 440 °C. However, the CdSe films grown on GaAs (1 0 0) keep ZB form in the whole range of Tg investigated from 300 to 500 °C.
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