Abstract

The phase transition of organosilane monolayers on Si-wafer substrate surfaces prepared from octadecyltrichlorosilane (OTS) or docosyltrichlorosilane (DOTS) was investigated on the basis of grazing incidence X-ray diffraction (GIXD) at various temperatures. The OTS monolayer was prepared by a chemisorption method. The DOTS monolayer was prepared by a water-cast method (DOTS). The GIXD measurement clarified that the OTS monolayer also changed from hexagonal phase to amorphous state above a melting point of otadecyl groups. The GIXD measurements also clarified that the molecular aggregation state of the DOTS monolayer changes from an anisotropic phase to an isotropic phase with an increase in temperature. An estimated linear thermal expansion coefficient of the lattice lengths of a and b of the DOTS monolayer in the rectangular crystalline state assigned a similar value to those of bulk polyethylene with an orthorhombic crystalline lattice. The setting angle of the ab plane of the rectangular DOTS monolayer also showed similar behavior to that of the ab plane of bulk polyethylene.

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