Abstract
VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.
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More From: Semiconductor Physics, Quantum Electronics and Optoelectronics
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