Phase Transition Engineering of Vanadium Dioxide Induced by Oxygen Vacancies

Abstract

A reconfigurable optical functional system is a pioneering and comprehensive approach for portable future flexible electronics, irrespective of traditional silicon-based technology. VO2 shows tremendous temperature-dependent structural and electrical phase transitions as a complex correlated metal oxide, presenting it as a potential candidate for bolometers, thermal camouflage, and optoelectronics applications. However, the structural stability and high transition temperature restrict room-temperature applications. The present study reports the oxygen vacancies-assisted phase transition engineering in the VO2/muscovite heterostructure. The ion bombardment alters the oxygen stoichiometry of VO2/muscovite thin film at room temperature. A significant decrease in lattice constant has been observed during the transition of the insulating M1 (monoclinic) phase into the metallic R (tetragonal) phase, which was confirmed through high-resolution XRD. The change in oxygen vacancy concentration determined using X-ray photoelectron spectroscopy (XPS) actively suppressed and stabilized the epitaxial thin film of VO2 near room temperature. We investigated whether applying increasing power-mediated ion bombardment for a few minutes affects the oxygen vacancy formation on the VO2/muscovite film’s surface. Consequently, a change in KPFM and 4 orders of magnitude change in resistance of VO2 thin film have been observed. This report reveals the fundamental understanding of controlling the MIT in epitaxial VO2 thin film via facile and clean phase transition engineering techniques for advanced flexible electronic devices.