Abstract

ABSTRACTIn this work, the thin films of vanadium oxide on Si substrate were deposited by RF sputtering and pulsed laser deposition method. The as-deposited samples were annealed in argon atmosphere at 500°C for 1 h and cooled at natural rate in argon atmosphere. The as-deposited and annealed samples were irradiated with 100 MeV Ag ions at different fluences. Structural characterizations were done by grazing incidence X-ray diffraction (GIXRD) and Raman spectroscopy at room temperature. GIXRD and Raman spectra revealed that phase transformation took place after swift heavy ions irradiation and the ratio of oxygen/vanadium concentration of the films decreased. The phase transformation and change in concentration may be due to transiently molten cylindrical zone created by the passage of swift heavy ions in the material.

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