Phase transform based on temperature distribution by post-sputtering selenization

Abstract

Influence of temperature distribution during fabricating CuInSe2 (CIS) thin films by post-sputtering selenization in the quasi-closed container has been studied through simulation and experiments. The morphology of fabricated thin films in the different container (quartz, graphite) presented nearly identical pattern to our simulated temperature distribution map. In-rich and Cu-rich metallic precursors were selenized separately with quartz container, regarding to its significant temperature gradient, for further investigation of the selenide binaries. In–Se binaries in the In-rich CIS thin film were studied carefully, revealing the phase transformation between indium selenides and CIS with Cu–Se binaries. Indium enrichment on the surface in the Cu-rich thin film was noticed and ascribed to both the differences in diffusion coefficients of alloys and deposition process of the precursors.