Phase Structure and Electrical Properties of Sm-Doped BiFe0.98Mn0.02O3 Thin Films.

Yangyang Wang,Zhibiao Ma,Bingdong Yao,Yan Liu,Fengqing Zhang,Zhaoyang Li,Luyi Zhu,Lingxu Wang,Xiaodong Guo

doi:10.3390/nano12010108

Yangyang Wang, Zhibiao Ma + Show 7 more

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https://doi.org/10.3390/nano12010108

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Abstract

Bi1−xSmxFe0.98Mn0.02O3 (x = 0, 0.02, 0.04, 0.06; named BSFMx) (BSFM) films were prepared by the sol-gel method on indium tin oxide (ITO)/glass substrate. The effects of different Sm content on the crystal structure, phase composition, oxygen vacancy content, ferroelectric property, dielectric property, leakage property, leakage mechanism, and aging property of the BSFM films were systematically analyzed. X-ray diffraction (XRD) and Raman spectral analyses revealed that the sample had both R3c and Pnma phases. Through additional XRD fitting of the films, the content of the two phases of the sample was analyzed in detail, and it was found that the Pnma phase in the BSFMx = 0 film had the lowest abundance. X-ray photoelectron spectroscopy (XPS) analysis showed that the BSFMx = 0.04 film had the lowest oxygen vacancy content, which was conducive to a decrease in leakage current density and an improvement in dielectric properties. The diffraction peak of (110) exhibited the maximum intensity when the doping amount was 4 mol%, and the minimum leakage current density and a large remanent polarization intensity were also observed at room temperature (2Pr = 91.859 μC/cm2). By doping Sm at an appropriate amount, the leakage property of the BSFM films was reduced, the dielectric property was improved, and the aging process was delayed. The performance changes in the BSFM films were further explained from different perspectives, such as phase composition and oxygen vacancy content.

Highlights

A small fraction of all magnetically polarized and electrically polarized materials are ferromagnetic or ferroelectric, and even fewer, namely multiferroic materials, have both properties [1,2]
The results show that in addition to the R3c phase, the Pnma phase existed in all samples, which was consistent with the X-ray diffraction (XRD) refinement results
Sm-doped BSFM films were prepared on indium tin oxide (ITO)/glass substrates by

Summary

Introduction

A small fraction of all magnetically polarized and electrically polarized materials are ferromagnetic or ferroelectric, and even fewer, namely multiferroic materials, have both properties [1,2]. The coupling between different properties of multiferroic materials will produce new properties, such as magnetoelectric effects. These materials have great development potential in the miniaturization and multi-functionalization of devices, as well as in a wide range of applications in the fields of magnetoelectric memory [3,4], sensors [5], and drivers [6]. Multiferroic materials are some of the most valuable multifunctional materials, and they have good application prospects in the field of multiferroic devices. Multiferroic materials include single-phase materials and composite materials. Few single-phase multiferroic materials have been discovered at present, and their

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