Abstract
The phase structure and electrical properties of pure and La2O3-doped Bi-InO3-PbTiO3 (BI-PT) ceramics were studied respectively. In (1-χ) BI-χPT (χ=0.72-0.80) ceramics, the stability of tetragonal phase increased with increasing χ, and pure perovskite structure was obtained for χ=0.80 ceramics. The phase transition temperature range was between 575℃ and 600℃ for χ=0.72-0.80 ceramics, higher than that of PT (~490℃). The c/a ratio almost linearly de-creased with increasing La2O3 content in χ=0.80 ceramics. It is believed that Pb(superscript 2+) vacancies were formed by La(superscript 3+) substituting Pb(superscript 2+) in La2O3-doped BI-PT ceramics. T(subscript c) shifted to lower temperature by 30℃/mol% La2O3. The maximum dielectric constant 8557 around 559℃ was exhibited in 0.5mol%-doped BI-0.80PT ceramics. La20rdoped ceramics could be poled resulting from decreasing of c/a ratio and improving of dielectric loss and resistivity. The maximum piezoelectric coefficient d33 was 12 pC/N for 2 mol%-doped BI-0.80PT ceramics.
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