Abstract
SiC to SiC were reacted by Ti foil at high temperature of 1673 K in vacuum. Ti reacted with SiC, and formed many reaction phases between SiC and Ti. At 1673 K SiC reacted at a reaction time of 0.5 ks or longer. From the SiC many reaction zones of Ti 3SiC 2, Ti 5Si 3C X , Ti 5Si 3C X + TiC, and TiC + Ti were formed. Ti binary compound of TiC and Ti ternary compounds of Ti 3SiC 2, and Ti 5Si 3C X , were formed. The principle of the reaction zones was thermodynamically discussed by the corresponding chemical potential diagram.
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