Abstract

A new phase shifting scanning electron microscope (SEM) moiré method is proposed in this paper. The phase shifting technique is realized in four steps from 0 to 2 π by shifting electron beam in the y-axis direction controlled by the SEM system. It is successfully applied to determine the residual strain of a deformed holographic grating with a frequency of 1200 lines/ mm in an electronic package. As a further application, it is used to measure the virtual strain of a MEMS structure with a 5000-line/mm grating and to determine the phase distribution of a SEM moiré formed with a 6000-line/mm grating fabricated by electron beam lithography. The experiments show the feasibility of this method. It provides a new way for disposal of fringes pattern in sub-micro moiré method.

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