Phase-Shift Bragg Grating in Silicon Using Equivalent Phase-Shift Method

Abstract

The design, fabrication, and measurement of a phase-shift Bragg grating in silicon using the equivalent phase-shift method are presented. Fabrication constrains are largely relaxed with this method, compared to that with conventional phase-shift structure using electron-beam lithography, enabling the fabrication of high-precision phase-shift gratings with low-cost lithography. We fabricated an equivalent phase-shift Bragg grating in silicon with optical-contact-lithography and interference lithography. The transmission spectrum shows that an equivalent quarter-wave phase-shift is achieved.