Abstract
AbstractThe effect of enhanced hydrostatic pressure (HP, (10â12) Ă 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450â1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of nonâstoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HPâtreated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of nearâinfrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressureâstimulated crystallization of Si inclusions. (Š 2008 WILEYâVCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
