Abstract
The evolvement of ternary Zn-O-Sn systems were selected through oxygen-controlled sputtering and oxygen-subtracted annealing as well as introduction of fluorine. Through XRD, Raman, PL, AFM, Transmittance, Hall-effect Testing and Resistance variation on sensing H2, the selection and formation mechanism of optional phases in the ternary Zn-O-Sn systems were clarified. During the sputtering process, oxygen addition could contribute to the selected growth of dual-phase Zn2SnO4/SnO2 with an aerobic characteristic. On the contrary, either oxygen subtraction or fluorine introduction was beneficial to the preferred growth of amorphous ZnSnO3 with an anaerobic characteristic which could further crystallize to single-phase perovskite ZnSnO3 following the vacuum annealing. Compared with dual-phase Zn2SnO4/SnO2 deposited under oxygen-containing ambience, single-phase amorphous ZnSnO3 with more oxygen vacancies presented a less light-scattered transmittance with the flattened absorption edge, a high carrier concentration ∼1017 cm−3 as well as a low carrier mobility ∼100 cm2/V·s, and a rapid response/recover rate of resistance on sensing H2.
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