Abstract
Phase regeneration of differential phase-shift keying (DPSK) signals is demonstrated using a silicon waveguide as nonlinear medium for the first time. A p-i-n junction across the waveguide enables decreasing the nonlinear losses introduced by free-carrier absorption (FCA), thus allowing phase-sensitive extinction ratios as high as 20 dB to be reached under continuous-wave (CW) pumping operation. Furthermore the regeneration properties are investigated under dynamic operation for a 10-Gb/s DPSK signal degraded by phase noise, showing receiver sensitivity improvements above 14 dB. Different phase noise frequencies and amplitudes are examined, resulting in an improvement of the performance of the regenerated signal in all the considered cases.
Highlights
In recent years, a renewed interest in all-optical phase-sensitive processing has lead to several breakthroughs being reported, spanning from differential phase-shift keying (DPSK) regeneration [1] to low noise amplification [2]
The regeneration properties are investigated under dynamic operation for a 10-Gb/s DPSK signal degraded by phase noise, showing receiver sensitivity improvements above 14 dB
In order to lock the waves in phase, 10% of the signal power was detected by a slow speed avalanche photodiode (APD) after the OPBFs following the waveguide and used as a reference for a feedback loop based on a piezoelectric actuator (PZT)
Summary
A renewed interest in all-optical phase-sensitive processing has lead to several breakthroughs being reported, spanning from differential phase-shift keying (DPSK) regeneration [1] to low noise amplification [2]. The non-linear absorption limitation in silicon can be circumvented by efficiently removing the FCs generated through TPA thanks to reverse-biased p-i-n diode structures implemented across the waveguide [10, 11]. With this approach, a record wavelength conversion efficiency has been demonstrated in p-i-n junction-based waveguides [11].
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