Abstract
The influence of cooling on the phase noise of HEMT and MESFET oscillators is addressed. The initial measurements of the device DC characteristics and low-frequency noise (0.1 kHZ-100 kHz) under cooling give indications on the suitability of a given device for use in low-phase-noise cooled oscillators. Cooled pseudomorphic AlGaAs-GaInAs-GaAs HEMTs (PHEMTs) turn out to be particularly well-suited as they are free of collapse and they are free of g-r noise in the frequency range of interest. The authors report on 4 GHz oscillators operated at 110 K and featuring a phase noise below -100 dBc/Hz at 10 kHz from the carrier in spite of a very modest loaded Q
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