Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

Ying-Che Tseng Ying-Che Tseng,D Ngo,E Spears,J.M Ford,W.M Huang,J.C.S Woo,D Spooner

doi:10.1109/55.737572

Phase noise characteristics associated with low-frequency noise in submicron SOI MOSFET feedback oscillator for RF IC's

Ying-Che Tseng Ying-Che Tseng, D Ngo + Show 5 more

https://doi.org/10.1109/55.737572

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Journal: IEEE Electron Device Letters	Publication Date: Jan 1, 1999
Citations: 24

Affiliation: Motorola (United States), University of California, Los Angeles

#High Frequency Phase Noise #Floating Body Silicon-on-insulator + Show 8 more

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Abstract

Phase noise in silicon-on-insulator (SOI) MOSFET feedback oscillators for RF IC applications is investigated. The observed correlation between the oscillator's high frequency phase noise and the transistor's low-frequency noise characteristics demonstrates that the phase noise overshoot still exists in partially-depleted (PD) floating body SOI nMOS Colpitts oscillators. These results suggest that kink-induced effects associated with low-frequency components of the signal are upconverted into the ideally kink-free high frequency domain operation mode of PD floating body SOI oscillators.

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