Phase modulation in InGaAsP barrier, reservoir, and quantum well electron transfer structures, grown by chemical beam epitaxy

Abstract

We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, Δn, similar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakage current <1 A/cm2. Our results show an unexpected negative Δn for both positive and negative bias, which we explain using calculations of the wave function.