Abstract
The crystal structure and electrical properties of doped-PST films with buffer layer deposited on Pt/SiO 2/Si substrates by reactive sputtering, have been investigated. By using the PbTiO s(PT) buffer layer, highly (100) oriented PZT films are obtained at the deposition temperature of 550°C. The tetragonality of PZT films is decreased with Ta concentration. Surface morphology and grain size of PZT films are also changed with the content of Ta doping. With increasing Ta doping, the surface morphology of Ta doped PZT(PTZT) films was slightly smoothed and the grain sizes were considerably enlarged. PTZT exhibits improved fatigue properties. The results indicate that the fatigue property of PZT can be influenced by introducing foreign elements.
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