Abstract
Joining of SiC to SiC was performed using Ti and Nb foils at temperatures ranging from 1373 K to 1790 K in vacuum. The change in microstructures of the SiC/Ti and SiC/Nb interfaces was investigated in detail at 1673 K and 1790 K, respectively. At a bonding time of 0.3 ks, TiC at the Ti side and a mixture of Ti5Si3Cx+TiC at the SiC side were formed. Furthemore, a Ti5Si3Cx layer phase appeared between SiC and mixture of Ti5Si3Cx+TiC, upon the formation of Ti3SiC2 after the bonding time of 3.6 ks, the diffusion path was observed as follows : β-Ti/Ti+TiC/TiC +Ti5Si3Cx/Ti5Si3Cx/Ti3SiC2/SiC. At 1790 K, the diffusion path between SiC and Nb was established as Nb/Nb2C/NbC/Nb5Si3C/NbC/SiC, and the NbSi2 phase appeared at the interface between NbC adjacent to SiC and Nb5Si3C at the longer time of 72 ks.
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