Phase formation and dielectric study of Bi doped (Ba0.8Sr0.2)Ti0.95(Zn1/3Nb2/3)0.05O3 ceramic

Abstract

The solid solutions of (Ba0.8Sr0.2)1-1.5xBixTi0.95(Zn1/3Nb2/3)0.05O3 (Bix-BSTZN) (with x = 0, 0.05 and 0.1) ceramics were prepared by the solid-state reaction route and their structural, dielectric and electric properties were investigated. The room temperature XRD study suggests that all the compositions have a single phase pseudocubic symmetry with space group Pm-3m. Temperature dependent dielectric studies of the ceramics have been investigated in the frequency range of 1 KHz–1 MHz. The dielectric constant and transition temperature decrease with the increase in Bi concentration due to the decrease in grain size. The substitution of Bi ion induces diffuse ferroelectric behavior and the degree of diffuseness increases with the increase in doping concentration. The electrical behavior for x = 0.05 ceramic has been studied by non-destructive complex impedance spectroscopy as a function of frequency at different temperatures. Variation of ac conductivity as a function of frequency shows that the compound exhibits Arrhenius-type of electrical conductivity.