Abstract
Electromigration damage due to void propagation in thin films has garnered much attention due to its implications for efficient design of interconnects. Voids can drift along the line, preserving its shape, or evolve into various time-dependent configurations, which are governed by the interplay between the capillarity and electron wind force. We have employed the phase-field method to elucidate the transition of a circular void to a finger-like slit. Following an initial transient regime, the void attains an equilibrium shape with a narrow parallel slit-like body, which contains a circular rear end, and a parabolic tip. The subsequent drift of the void is characterized by shape invariance along with a steady-state slit width and velocity, which scale with the applied electric field as $$E^{-1/2}$$ and $$E^{3/2}$$ , respectively. The results obtained from phase-field simulations are critically compared with the sharp-interface solution. Repercussions of the study, in terms of prediction of void migration in flip-chip Sn-Ag-Cu solder bumps and fabrication of channels with desired micro/nanodimensions, are discussed.
Published Version
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