Abstract
We formulate a phase-field, or diffuse-interface, model for the evolution of stepped surfaces under surface diffusion in the presence of distinct material parameters across nanoscale terraces. In the sharp-interface limit, our model reduces to a Burton-Cabrera-Frank (BCF)-type theory for the motion of noninteracting steps separating inhomogeneous terraces. This setting aims to capture features of reconstructed semiconductor, e.g., Si surfaces below the roughening transition. Our work forms an extension of the phase-field construction by Hu et al. [Physica D 241, 77 (2012)].
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