Abstract
The cellular growth of Ni x Cu1−x and Ge1−x Si x has been studied by means of a phase-field method. Concerning the wavelength as a function of the cooling velocity our results for Ni x Cu1−x are in good agreement with those obtained by other authors. The computations for Ge1−x Si x are more challenging, because the structures of interest are much larger. Studies of the cellular growth for different temperature gradients and diffusion coefficients have been performed.
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