Abstract
The cellular growth of Ni x Cu1−x and Ge1−x Si x has been studied by means of a phase-field method. Concerning the wavelength as a function of the cooling velocity our results for Ni x Cu1−x are in good agreement with those obtained by other authors. The computations for Ge1−x Si x are more challenging, because the structures of interest are much larger. Studies of the cellular growth for different temperature gradients and diffusion coefficients have been performed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
