Abstract

(Ba1-xBi0.67xNa0.33x)(Ti1-xBi0.33xSn0.67x)O3 (abbreviated as BBNTBS, 0.02 ⩽ x ⩽ 0.12) ceramics were fabricated via a traditional solid state reaction method. The phase transition of BBNTBS from tetragonal to pseudo cubic is demonstrated by XRD and Raman spectra. The BBNTBS (x = 0.1) ceramics have decent properties with a high εr (~2250), small Δε/ε25°C values of ±15% over a wide temperature range from -58 to 171 °C, and low tanδ ⩽ 0.02 from 10 to 200 °C. The basic mechanisms of conduction and relaxation processes in the high temperature region were thermal activation, and oxygen vacancies might be the ionic charge transport carriers. Meanwhile, BBNTBS (x = 0.1) exhibited decent energy storage density (Jd = 0.58 J/cm3) and excellent thermal stability (the variation of Jd is less than 3% in the temperature range of 25–120 °C), which could be a potential candidate for high energy density capacitors.

Highlights

  • With the rapid development of microelectronics, dielectric capacitors with high dielectric constant and good thermal stability have attracted much attention [1]

  • Chen et al [19] reported that the amphoteric behavior of Bi ion doped BT could improve the thermal stability of ceramics

  • BBNTBS (0.02 ≤ x ≤ 0.12) ceramics were prepared by a conventional solid phase reaction method and detailed experimental processes were described in the Electronic Supplementary Material (ESM)

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Summary

Introduction

With the rapid development of microelectronics, dielectric capacitors with high dielectric constant and good thermal stability have attracted much attention [1]. Most dielectric capacitors are lead-based relaxor compositions [2,3]. The above materials have obtained good dielectric properties in a wide temperature range. Chen et al [19] reported that the amphoteric behavior of Bi ion doped BT could improve the thermal stability of ceramics. An amphoteric behavior similar to Bi ions has been reported in rare earth element doped BT and Bi0.5Na0.5TiO3 ceramics [20,21,22,23]. It could be expected that (Ba1–xBi0.67xNa0.33x) (Ti1–xBi0.33xSn0.67x)O3 (BBNTBS) may exhibit decent dielectric properties. The phase evolution, microstructure, and electric properties of BBNTBS ceramics were systematically studied

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