Abstract
The quasiternary system Ag2S–Ga2S3–In2S3 was investigated by differential thermal, X-ray diffraction analyses. The phase diagram of the Ga2S3–In2S3 system and nine polythermal sections, isothermal section at 820K and the liquidus surface projection were constructed. The existence of the large solid solutions ranges of binary and ternary compounds was established. The range of the existence of the quaternary phase AgGaxIn5−xS8 (2.25≤x≤2.85) at 820K was determined. The single crystals (Ga55In45)2S300 and (Ga54.59In44.66Er0.75)2S300 were grown by a directional crystallization method from solution-melt. Optical absorption spectra in the 500–1600nm range were recorded. The luminescence of the (Ga54.59In44.66Er0.75)2S300 single crystal shows a maximum at 1530nm for the excitation wavelengths of 532 and 980nm at 80 and 300K.
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