Phase Equilibria in the MnGa2Tе4-MnIn2Tе4 System, Crystal Structure and Physical Properties of MnGaInTе4

Faig Мamedagha Mammadov,Мahammad Baba Babanly,Sadiyar Sultan Ragimov,Yegana Rasul Aliyeva,Imamaddin Rajabali Amiraslanov,Leyla Farkhad Mashadiyeva

doi:10.17344/acsi.2019.4988

Faig Мamedagha Mammadov, Мahammad Baba Babanly + Show 4 more

Open Access

https://doi.org/10.17344/acsi.2019.4988

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Abstract

The phase equilibria in the MnGa2T?4-MnIn2T?4 system were experimentally investigated by means of differential thermal analysis and powder X-ray diffraction technique. It was found that this system is quasi-binary and characterized by dystectic and eutectic equilibria and the formation of a wide area of solid solutions based on the starting compounds. The crystal structures of the MnGaInTe4 and MnIn2T?4 were refined by the Rietveld method using powder X-ray diffraction data. It was established, that both phases crystallize in the tetragonal system (Space group I-42m). Electron paramagnetic resonance and Raman spectra, as well as the temperature dependences of the electrical conductivity and the Hall effect for the MnGaInTe4 crystal, were studied.

Highlights

Search and development of methods for the directed synthesis of new multicomponent phases and materials requires the study of phase equilibria in the relevant systems.[18,19]
The individuality of the synthesized compounds was controlled by differential-thermal analysis (DTA) and powder X-ray diffraction technique (PXRD)
Phase equilibria in the MnGa2Te4-MnIn2Te4 system were investigated by means of DTA and PXRD methods

Summary

Introduction

Complex metal chalcogenides are essential functional materials possessing optical, photoelectric, thermoelectric, magnetic and other properties.[1,2,3,4,5,6,7] Recent studies have shown that some of these phases are topological insulators and are considered promising for use in spintronics and quantum computing.[8,9,10,11] Among the chalcogenide materials, magnetic semiconductors of the type MB2X4 (where M – Mn, Fe, Co, Ni; B – Ga, In; X – S, Se, Te) and phases on their basis are very promising for use in the manufacture of lasers, light modulators, photodetectors and other electronic devices controlled by a magnetic field.[12,13,14,15,16,17]. The phase equilibria in the MnGa2Tе4-MnIn2Tе4 system are studied, the crystal structures of the MnGaInTe4 and MnIn2Te4 are refined, as well as the EPR and Raman spectra for the MnGaInTe4 crystals are measured, and the temperature dependences of the electrical conductivity and the Hall Effect of the MnGaInTe4 are investigated. The MnIn2Tе4 compound melts congruently at 1013 K,27 (at 1040 K according to reference,[28]). The crystal structure of the MnGa2Tе4 was studied in a number papers.[26, 29, 30] The authors,[29] showed that this compound has a pseudo-tetragonal monoclinic unit cell with parameters: a = b = 0.847 nm; c = 4.83 nm; α = β=γ ~.

The Experimental Part

Methods

Results and Discussion