Abstract
Vaporization chemistry in the indium‐selenium system was studied by the simultaneous Knudsen effusion and torsion effusion method, by x‐ray powder diffraction, and by sealed tube and closed cell methods. Indium sesquiselenide, vaporized incongruently in the range 1004–1156 K. Above , it vaporized by and below , it vaporized by . Above , vaporized by. Finally, vaporized congruently by . Third law values of ΔH0 (298 K) were , , and of gas, respectively. The ΔH0(298 K) between the states and was of . The ΔH0 (298 K) of formation of was . In the temperature‐pressure‐composition phase diagram an invariant point at was observed. Trends in the vaporization of indium and gallium chalcogenides are described. Similarities between the vaporization behavior of and are noted and discussed.
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