Abstract
The nature of equilibria in the Ag2S–In2S3–Si(Ge)S2 systems was determined. The investigated vertical sections allow us to select the optimal conditions for the growth of the quaternary single crystals Ag2In2SiS6 and Ag2In2GeS6. Spectral distribution of the absorption coefficient and its photoinduced changes were studied. The possibility of using the investigated compounds as materials with controlled properties is demonstrated.
Highlights
The study of the compound interaction in the I-III-X2 – IV-X2 systems where I–Cu, Ag; III–Ga, In; IV–Si, Ge, Sn; X–S, Se are of interest due to the prospects of modifying the parameters of the ternary phases [1]
The formation of solid solution ranges of AICIIIX2 compounds and of quaternary compounds is characteristic of these systems
The objective of this work is to investigate vertical sections and liquidus surface projections of the Ag2S–In2S3–Si(Ge)S2 systems which contain information for the single crystal growth conditions of the quaternary phases, and to study photoinduced absorption changes which can open up wide use in various optoelectronic devices such as optical triggers and switches
Summary
The study of the compound interaction in the I-III-X2 – IV-X2 systems where I–Cu, Ag; III–Ga, In; IV–Si, Ge, Sn; X–S, Se are of interest due to the prospects of modifying the parameters of the ternary phases [1]. This makes possible their use in photovoltaics in the case of Cu-containing phases or non-linear optics which is typical of Ag-containing compounds. The formation of solid solution ranges of AICIIIX2 compounds and of quaternary compounds is characteristic of these systems. The formation of the 2-2-1-6 compounds is more common for Ag-containing systems
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