Phase-engineered heterostructures of Mo2C by plasma-assisted selenization and sulfurization processes toward excellent hydrogen evolution reaction

Abstract

Due to the outstanding semiconducting and metallic properties, 2D materials such as Transition Metal dichalcogenides (TMDs) and Transition Metal Carbides (TMCs) appear to be promising candidate for Nano-scale electronics devices. Among them, 2D - Mo2C (Molybdenum carbide) has attracted attention as a new member of the MXene group, owing to its potential applications for superconductors, electronics devices, and catalysts for Hydrogen evolution Reactions (HER). Structural modification toward the creation of novel heterostructures with phase engineering opens new pathways for different applications. Herein, we prepared a large area Mo2C film by chemical vapor deposition method. The upper region of Mo2C layers can be oxidized to create Mo2C/MoOx heterostructures. Furthermore, those oxide layers were further transformed into MoSe2 and MoS2 by plasma-assisted selenization and sulfurization processes at different temperatures with a fixed plasma power of 150 W. The heterostructures demonstrated outstanding electrocatalytic activity for HER due to an existed metallic phase and active sites present after plasma-assisted selenization and sulfurization processes at the low temperature. The performance of the HER decreases at high temperatures owing to their semiconducting phase. The pristine Mo2C showed a Tafel slope of 72 mV dec−1 and an overpotential of 276 mV at 10 mA/cm2, while the Mo2C/MoSe2 heterostructure synthesized at 350 °C350 °exhibited an improved Tafel slope of 66 mV dec−1 and overpotential of 257 mV at 10 mA/ cm2. Additionally, the Mo2C/MoS2 heterostructure prepared at 350 °C also demonstrated a 263 mV improvement in overpotential at 10 mA/cm2. All the heterostructures showed excellent stability over a period of 10 h except Mo2C/MoOx. This work opens new strategies to fabricate high-quality MXene and TMDs heterostructures with metal-semiconductor interface.