Phase diagram of the semiconductor GaSb–ferromagnet GaMn system

Abstract

In this work we report the results of complex studies of basic properties and phase equilibria in GaSb–GaMn system within wide composition range. Investigated alloys were synthesized using regimes with relatively low crystallization speed, which resulted in a formation of stable monoclinic modification of GaMn, as suggested by the X-ray diffraction data analysis. The latter also suggested the negligible role of mutual solubility of components in agreement with spatial distribution of elements in studied alloys determined using energy dispersive X-ray spectroscopy. Combination of microstructural data and results of differential thermal analysis reveals the eutectic character of interaction in GaSb–GaMn system with eutectic composition corresponding to 45 mol.% of GaMn and melting temperature of 609 °C. This temperature is substantially lower than reported values of peritectic melting temperature of GaMn, which suggests the possibility of stabilizing hard ferromagnetic L10-GaMn modification in GaSb–GaMn system without substantial deterioration of crystal quality typical for GaMn compounds.