Abstract
In the present work, we investigate, in detail, the phase diagrams of the TlGaSe2–Zn(Cd,Hg)Se systems, which are quasi-binary and eutectic type. The solid phase solubility on the basis of components did not exceed 5 mol% at 670 K. The crystals of TlGaSe2: Zn+2(Cd+2, Hg+2)) solid solutions were prepared by Bridgman-Stokbarger method. It was established that the doping of Zn+2, Cd+2, Hg+2 leads to a slight decrease in the values of both the direct and indirect band gap energies with respect to the that in undoped TlGaSe2 crystal. The temperature dependence of the band gap values for all the synthesized compounds is crucial for semiconductor applications. Also, the dominant mechanisms are proposed that contribute to the fundamental absorption edge tailing.
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